Researchers from South Korea’s DGIST address the bandgap challenge in Ag-alloyed Cu(In,Ga)Se2 thin films (ACIGS). They reveal correlations between element diffusion, notch-point formation, and resulting circuit voltage. Modulating process temperatures (340 to 470 °C) refines the band gap, enabling tailored grading. Achieving 17.7% efficiency without post-deposition treatments, their breakthrough emphasizes deposition temperature’s impact on ACIGS film properties, propelling solar-cell technology advancements.
DGIST : Daegu-Gyeongbuk Institute of Science and Technology
