China-based TrinaSolar has announced a record-breaking 27.08% efficiency for its industrial larger-area n-type total passivation (TOPAS) solar cell based on heterojunction (HJT). This achievement, confirmed by the Institute for Solar Energy Research in Hamelin, Germany, marks the first time a crystalline silicon solar cell with a front and back contact structure has achieved front-side efficiency above 27%. The solar cell utilizes a large-area n-type phosphorus-doped Cz silicon wafer (210×105 mm²) with a high minority carrier lifetime. Advanced features such as thin-film passivating contact, a variable-frequency RF nanocrystalline p-type emitter, optimized light trapping, and precise fine-line printing technologies contributed to this milestone.