Researchers from UniversitatPolitècnica de Catalunya, Escola Tècnica Superior D'Enginyeria Industrial de Barcelona (ETSEIB)have developed laser-fired rear contacts for p-type c-Ge TPV devices. The method uses an infrared laser (λ = 1064 nm) to fire aluminium through an Al₂O₃/a-SiC passivation layer on commercial c-Ge wafers. Aluminium diffusion into the substrate has formed p+ regions, confirmed by ToF-SIMS analysis. By adjusting laser and film parameters, contact size is controlled and damage minimized. Optimized contacts have achieved 7.2·10⁻⁵Ω·cm² resistivity and 1075 cm/s surface recombination velocity. The contacts were integrated into c-Ge photovoltaic devices as a proof of concept. Under 1 sun illumination, 6.29 % efficiency was recorded. The approach avoids epitaxy, reduces costs, and supports integration into future TPV systems.