Shanghai study improves solar cells with bilayer ITO design

Shanghai Hency Solar Technology, based in China, has collaborated with Shanghai Jiao Tong University to enhance silicon solar heterojunction cell performance. The study, published in ScienceDirect, addresses sputtering damage caused by high-power deposition of indium tin oxide (ITO) layers. Shanghai Hency Solar said that a bilayer ITO structure—with a low-power inner buffer layer deposited with oxygen levels and high-power outer layer applied with more oxygen—has minimized this damage. According to the researchers, the inner buffer reduces sputtering damage and outer ITO layer enhances conductivity and light transmission, compared to monolayer films. The design has preserved open-circuit voltage and achieved 25.36% efficiency, with a 0.11% gain. As per Shanghai Jiao Tong University, the gain is due to improved short-circuit current density and fill factor enabled by optimized ITO deposition.