Delft, NOVA researchers optimize ICO layer for SHJ solar cell

NOVA Lisbon and Delft University has improved SHJ solar cells by integrating optimized ICO layers, gaining 0.55% efficiency and 0.67 in JSC.

By Prudhvi Rani 24 Apr 2025 in Tech Bytes

New Update

The optimized ICO layer in SHJ cells raised current density by 0.67 and improved efficiency by 0.55%, reaching 23.6%. Image Source: Science Direct. Image Source: ARS

Researchers from Delft University and NOVA University Lisbon published a study on optimizing room-temperature RF-sputtered cerium-doped indium oxide (ICO) for use in high-performance SHJ solar cells. They adjusted sputtering parameters such as oxygen flow, deposition pressure and RF power. The optimized 35 nm ICO layer showed a mobility of 44.22 cm²/Vs, a carrier concentration of 1.65 × 10²⁰/cm³, and a resistivity of 8.56 × 10⁻⁴ Ω·cm. When applied to front/back contact silicon heterojunction (FBC-SHJ) solar cells, the ICO layer raised the short-circuit current density by 0.67 compared to ITO-based cells. This led to a 0.55% increase in power conversion efficiency, reaching around 23.6%.

#SHJSolarCells #ICOSolarLayer #NOVAUniversityLisbon #DelftUniversity

Advertisment {'id': '680a00103c1cc62388d1c26e', 'source_name': 'Sciencedirect', 'source_link': 'https://www.sciencedirect.com/science/article/pii/S0927024825002387', 'contact_name': '', 'contact_email': ''}

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