South Korea-based semiconductor designer and manufacturer Magnachip, has recently introduced two 6th-generation 650 V Insulated Gate Bipolar Transistors (IGBTs), in support of PV inverters. These IGBTs are designed with polyimide insulation layers, which improves durability in high-voltage, and extreme weather conditions. Both models feature fast recovery anti-parallel diodes, reducing switching losses and optimizing power conversion. The MBQ40T65S6FHTH model lowers conduction loss by 25%, improving efficiency by 15% in 15 kW solar inverters. The MBQ40T65S6FSTH model reduces switching loss by 15% and conduction loss by 8%, increasing efficiency by 11% in 3 kW solar inverters. Magnachip plans to expand its Gen6 650 V IGBT lineup later this year with current ratings from 5 A to 75 A.