A recent study by Univ. Grenoble Alpes, a France-based public research university, and LONGi Green Energy Technology, a China-based solar manufacturer, has evaluated antimony-doped Czochralski silicon wafers for solar cell production. According to the study, antimony doping provides a narrow and stable resistivity range, offering improved control compared to conventional phosphorus doping. The study also reported that oxygen concentrations across most wafers were maintained below 7 × 10¹⁷ cm⁻³, significantly reducing the risk of oxygen-related defects. As per the study, as-grown thermal donor concentrations were low and had no measurable impact on bulk carrier lifetime performance. The research further stated that antimony doping does not significantly influence thermal donor formation during high-temperature processing, ensuring electrical and thermal stability for solar cell manufacturing.