Fraunhofer Institute for Solar Energy Systems (ISE) researchers released a paper on light and elevated temperature induced degradation (LeTID) in gallium-doped silicon. Despite earlier work, a complete quantitative description of subprocesses was missing, particularly temporary recovery, which countered degradation. Researchers treated gallium-doped Czochralski silicon wafers under varying temperatures and carrier densities, measuring changes in effective lifetime. Temporary recovery was observed to increase at lower temperatures, showing negative activation energy and indicating a multi-step process. Its dependence on carrier density followed a power law. For degradation and regeneration, activation energies were found similar, aligning with an atomistic model involving atomic hydrogen binding. The study provided kinetic parameters for LeTID using the three-state model, enabling precise description of degradation behavior.