A new analytical technique called the elasticity method has been introduced to evaluate recombination in silicon wafers using injection-dependent carrier lifetime data. The method, defined as the slope of a log-log plot of lifetime versus carrier concentration, helps identify dominant recombination mechanisms across specific injection levels. According to the researchers, when elasticity equals 1, surface recombination is dominant, allowing the surface recombination current density J₀ to be directly calculated. In experiments involving wafers passivated with polycrystalline silicon on ultrathin oxide, J₀ was observed to be as low as 1 fA/cm². The method was further applied to analyze boron-oxygen (BO) and LeTID bulk defects, with extracted Q-values aligning closely with conventional Shockley-Read-Hall model fitting. The research group stated that the technique offers a simplified and accurate means of distinguishing between surface and bulk recombination behaviors without requiring full lifetime curve modeling, enhancing wafer-level diagnostic capabilities in PV material studies.