A research team at the US Department of Energy’s National Renewable Energy Laboratory (NREL) has advanced optoelectronic devices by integrating a III-V semiconductor optoelectronic structure with a chiral halide perovskite semiconductor. This innovation allows control of electron spin at room temperature without magnetic fields, potentially transforming LEDs, solar cells, and telecommunications lasers. The researchers, funded by CHOISE and DOE, showed that manipulating electron spin can enhance data processing speeds and reduce power consumption. The polarization degree improved from 2.6% to 15% with the new structure, indicating significant progress in spin accumulation. According to the company, this breakthrough combines spin functionality with traditional LEDs, paving the way for futuristic spin control devices.
Optoelectronic breakthrough by NREL team
Polarization degree improves significantly from 2.6% to 15% with new semiconductor structure. (Image Credit: NREL)
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