Hitachi Energy and Pakal Technologies have entered a collaboration to integrate the IGTO(t)™ silicon power switch into high-voltage power modules. The devices will target rail, renewables, energy storage, AI and data center infrastructure. The IGTO(t) delivers 30 % lower conduction losses than conventional IGBT devices at high current and temperature. The partners plan to develop ≥ 3.3 kV semiconductor modules compatible with existing architectures. The technology is expected to improve power density, reduce cooling requirements and enhance system efficiency.