Researchers at the Technical University of Denmark investigated local edge passivation of laser-scribed solar cells using Direct Atomic Layer Processing (DALP). The study examined DALP® applied with the NANOFABRICATOR® tool from ATLANT 3D. Laser scribing created edge defects that reduced carrier lifetime due to recombination. To limit these losses, a 50 nm local TiO₂ layer was deposited around the scribed edges by atomic layer deposition using titanium iso-propoxide and water. The TOPCon cells used in the work were without metallization, so lifetime, lifetime at Vmpp, implied open-circuit voltage, and implied fill factor were evaluated. Measurements were carried out with a Sinton WCT120-PL tool and an MDP Mapper from Freiberg Instruments before and after passivation. Deposition followed by annealing resulted in a lifetime increase of 149 μs and an implied open-circuit voltage gain of 8.6 mV.