Scientists at Delft University of Technology in the Netherlands have developed an n-type silicon heterojunction (SHJ) solar cell utilizing a hole-transport layer (HTL) made from transition metal oxide (TMO) thin films. These TMO films, known for their large bandgap, show great potential to enhance SHJ cell performance by increasing short-circuit current density. According to the researchers, precise control over the TMO layers’ electrical properties is critical for optimizing their role as carrier-selective layers. The team engineered the interface between the TMO and the silicon passivation layer, improving SHJ cell efficiency. The study found that modifying the oxygen content in TMO films enhances electronic properties. The WOx-based SHJ cells achieved 23.30% efficiency, and V2Ox-based cells reached 22.04%.
Delft University optimizes SHJ solar cells’ carrier-selective layers
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