A China-based materials research collaboration has reported a three-dimensional electrical imaging study on perovskite films. The research has been conducted using tomographic conductive atomic force microscopy to map current distribution within films. The study has analyzed untreated, bulk-passivated, surface-passivated, and combined-passivated perovskite samples. Depth-resolved current mapping has revealed high-resistance regions within untreated perovskite films that impede carrier transport. Bulk passivation has reduced internal high-resistance regions and enhanced grain boundary conductivity throughout film interiors. Surface passivation has primarily improved near-surface electrical properties while temporarily lowering surface conductivity. Combined bulk and surface passivation has confined high-resistance regions to the top surface layers. Quantitative analysis has shown improved carrier diffusion coefficients and reduced surface recombination velocities. Device measurements have reported power conversion efficiency improvements up to 25.1%. Stability tests have shown 86% efficiency retention after 400 h for combined-passivated devices.